Materials fundamentals of gate dielectrics
Materials Fundamentals of Dielectric Gates treats materials fundamentals of the novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scaling of the CMOS devices.
| Other Authors: | Demkov, Alexander A., Navrotsky, Alexandra., SpringerLink (Online service) |
|---|---|
| Format: | eBook |
| Language: | English |
| Published: |
Dordrecht :
Springer,
©2005.
Dordrecht : [2005] |
| Physical Description: |
1 online resource (viii, 475 pages) : illustrations. |
| Series: |
Advances in mathematics (Springer Science+Business Media) ;
v. 9. |
| Subjects: |
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| 245 | 0 | 0 | |a Materials fundamentals of gate dielectrics / |c edited by Alexander A. Demkov and Alexandra Navrotsky. |
| 260 | |a Dordrecht : |b Springer, |c ©2005. | ||
| 264 | 1 | |a Dordrecht : |b Springer, |c [2005] | |
| 264 | 4 | |c ©2005. | |
| 300 | |a 1 online resource (viii, 475 pages) : |b illustrations. | ||
| 336 | |a text |b txt |2 rdacontent. | ||
| 337 | |a computer |b c |2 rdamedia. | ||
| 338 | |a online resource |b cr |2 rdacarrier. | ||
| 347 | |a text file. | ||
| 347 | |b PDF. | ||
| 504 | |a Includes bibliographical references and index. | ||
| 520 | |a Materials Fundamentals of Dielectric Gates treats materials fundamentals of the novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scaling of the CMOS devices. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Materials and Physical Properties of High-K Oxide Films; Device Principles of High-K Dielectrics; Thermodynamics of Oxide Systems Relevant to Alternative Gate Dielectrics; Electronic Structure and Chemical Bonding in High-k Transition Metal and Lanthanide Series Rare Earth Alternative Gate Dielectrics: Applications to Direct Tunneling and Defects at Dielectric Interface; Atomic Structure, Interfaces and Defects of High Dielectric Constant Gate Oxides; Dielectric Properties of Simple and Complex Oxides from First Principles; IVb Transition Metal Oxides and Silicates: An Ab Initio Study. | |
| 505 | 8 | |a The Interface Phase and Dielectric Physics for Crystalline Oxides on SemiconductorsInterfacial Properties of Epitaxial Oxide/Semiconductor Systems; Functional Structures; Mechanistic Studies of Dielectric Growth on Silicon; Methodology for Development of High-. Stacked Gate Dielectrics on III-V Semiconductors. | |
| 506 | |a Available to OhioLINK libraries. | ||
| 650 | 0 | |a Gate array circuits. | |
| 650 | 0 | |a Dielectrics. | |
| 650 | 0 | |a Metal oxide semiconductors, Complementary. | |
| 650 | 6 | |a Circuits prédiffusés. | |
| 650 | 6 | |a Diélectriques. | |
| 650 | 6 | |a MOS complémentaires. | |
| 650 | 7 | |a dielectric properties. |2 aat. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Circuits |x VLSI & ULSI. |2 bisacsh. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Circuits |x Logic. |2 bisacsh. | |
| 650 | 7 | |a COMPUTERS |x Logic Design. |2 bisacsh. | |
| 650 | 0 | 7 | |a Dielectrics. |2 cct. |
| 650 | 0 | 7 | |a Gate array circuits. |2 cct. |
| 650 | 0 | 7 | |a Metal oxide semiconductors, Complementary. |2 cct. |
| 650 | 7 | |a Physique. |2 eclas. | |
| 650 | 7 | |a Dielectrics. |2 fast. | |
| 650 | 7 | |a Gate array circuits. |2 fast. | |
| 650 | 7 | |a Metal oxide semiconductors, Complementary. |2 fast. | |
| 700 | 1 | |a Demkov, Alexander A. | |
| 700 | 1 | |a Navrotsky, Alexandra. | |
| 710 | 2 | |a SpringerLink (Online service) | |
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