Defects in high-k gate dielectric stacks nano-electronic semiconductor devices /

The goal of this NATO Advanced Research Workshop (ARW) entitled "Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices", which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of ad...

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Corporate Authors: NATO Advanced Research Workshop on Defects in High-k Dielectric Nano-electronic Semiconductor Devices Saint Petersburg, Russia)
Other Authors: NATO Advanced Research Workshop on Defects in High-k Dielectric Nano-electronic Semiconductor Devices, Gusev, Evgeni., SpringerLink (Online service)
Format: eBook
Language: English
Published: Dordrecht : Springer, ©2006.
Dordrecht : [2006]
Physical Description: 1 online resource (x, 492 pages) : illustrations.
Series: NATO science series. Mathematics, physics, and chemistry ; v. 220.
Subjects:
Table of Contents:
  • High-k technology
  • Defects in high-k dielectrics : characterization
  • High-k processing and defects
  • High-k theory
  • Electrically active defects
  • Interfaces
  • Processing, characterization and devices.