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  1. 1

    The results of an interlaboratory study of ellipsometric measurements of thin film silicon dioxide on silicon by Belzer, Barbara J.

    Published: U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1997
    Description: iv, 25 pages : illustrations ; 28 cm.
    “…Results of an interlaboratory study of ellipsometric measurements of thin film silicon dioxide on silicon.…”
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    The results of an interlaboratory study of ellipsometric measurements of thin film silicon dioxide on silicon
  2. 2

    Boundary lubrication of silicon nitride by Gates, Richard Stephen, 1956-

    Published: U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1995
    Description: xxv, 379 pages : illustrations ; 28 cm.
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    Boundary lubrication of silicon nitride
  3. 3

    Preparation and certification of SRM-2530, ellipsometric parameters [delta] and [psi] and derived thickness and refractive index of a silicon dioxide layer on silicon by National Institute of Standards and Technology (U.S.)

    Published: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1988
    Description: x, 37 pages : illustrations ; 28 cm.
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    Preparation and certification of SRM-2530, ellipsometric parameters [delta] and [psi] and derived thickness and refractive index of a silicon dioxide layer on silicon
  4. 4

    Silicon microelectronics programs at the National Institute of Standards and Technology by National Institute of Standards and Technology (U.S.). Office of Microelectronics Programs, National Institute of Standards and Technology (U.S.)

    Description: volumes : illustrations.
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    Silicon microelectronics programs at the National Institute of Standards and Technology
  5. 5

    Automatic determination of the interstitial oxygen content of silicon wafers polished on both sides by National Institute of Standards and Technology (U.S.)

    Published: U.S. Dept. of Commerce, National Institute of Standards and Technology ; [Order from National Technical Information Service], 1988
    Description: iii, 66 pages : illustrations ; 28 cm.
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    Automatic determination of the interstitial oxygen content of silicon wafers polished on both sides
  6. 6

    Gasification of silicone fluids under external thermal radiation by Austin, Philip J.

    Published: U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology ; [Order from NTIS], 1997
    Description: 41 pages, 42 unnumbered pages : illustrations.
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    Gasification of silicone fluids under external thermal radiation
  7. 7

    Certification of a standard reference material for the determination of interstitial oxygen concentration in semiconductor silicon by infrared spectrophotometry by Rennex, Brian

    Published: U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology ; For sale by the Supt. of Docs., U.S. G.P.O., 1994
    Description: xiv, 55 pages : illustrations ; 28 cm.
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    Certification of a standard reference material for the determination of interstitial oxygen concentration in semiconductor silicon by infrared spectrophotometry
  8. 8

    EPROP, an interactive FORTRAN program for computing selected electronic properties of gallium arsenide and silicon by Seabaugh, Alan Carter

    Published: U.S. Dept. of Commerce, National Institute of Standards and Technology ; [Order from National Technical Information Service], 1990
    Description: v, 117 pages : illustrations ; 28 cm.
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    EPROP, an interactive FORTRAN program for computing selected electronic properties of gallium arsenide and silicon
  9. 9

    On the fractographic analysis of machining cracks in ground ceramics a case study on silicon nitride by Quinn, G. D. (George D.)

    Published: U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 2003
    Description: 104 pages : illustrations ; 28 cm.
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    On the fractographic analysis of machining cracks in ground ceramics a case study on silicon nitride
  10. 10

    Improved low-level silicon-avalanche-photodiode transfer standards at 1.064 micrometers by Rasmussen, A. L.

    Published: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1989
    Description: iii, 24 pages : illustrations.
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    Improved low-level silicon-avalanche-photodiode transfer standards at 1.064 micrometers
  11. 11

    Database for and statistical analysis of the interlaboratory determination of the conversion coefficient for the measurement of the interstitial oxygen content of silicon by infrared absorption by National Institute of Standards and Technology (U.S.)

    Published: U.S. Dept. of Commerce, National Institute of Standards and Technology ; For sale by the Supt. of Docs., U.S. G.P.O., 1989
    Description: x, 168 pages : illustrations ; 28 cm.
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    Database for and statistical analysis of the interlaboratory determination of the conversion coefficient for the measurement of the interstitial oxygen content of silicon by infrared absorption
  12. 12

    The certification of 100 mm diameter silicon resistivity SRMs 2541 through 2547 using dual-configuration four-point probe measurements by Ehrstein, James R.

    Published: U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1997
    Description: xv, 84 pages : illustrations ; 28 cm.
    “…Certification of one hundred mm diameter silicon resistivity SRMs ...…”
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    The certification of 100 mm diameter silicon resistivity SRMs 2541 through 2547 using dual-configuration four-point probe measurements

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