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OCoLC |
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20240223121953.0 |
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m o d |
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cr cnu---unuuu |
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190206s2019 si o 000 0 eng d |
| 015 |
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|
|a GBB970228
|2 bnb
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| 016 |
7 |
|
|a 019352396
|2 Uk
|
| 019 |
|
|
|a 1085160878
|a 1091246380
|a 1091325442
|a 1105197546
|a 1110946788
|a 1122847309
|a 1125733290
|a 1136391274
|a 1156398088
|a 1161314796
|a 1162737184
|
| 020 |
|
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|a 9789811329531
|q (electronic bk.)
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| 020 |
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|a 9811329532
|q (electronic bk.)
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| 020 |
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|a 9789811329548
|q (print)
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| 020 |
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|a 9811329540
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| 020 |
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|z 9789811329524
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| 020 |
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|z 9811329524
|
| 024 |
7 |
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|a 10.1007/978-981-13-2953-1
|2 doi
|
| 024 |
8 |
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|a 10.1007/978-981-13-2
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| 035 |
|
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|a (OCoLC)1084655223
|z (OCoLC)1085160878
|z (OCoLC)1091246380
|z (OCoLC)1091325442
|z (OCoLC)1105197546
|z (OCoLC)1110946788
|z (OCoLC)1122847309
|z (OCoLC)1125733290
|z (OCoLC)1136391274
|z (OCoLC)1156398088
|z (OCoLC)1161314796
|z (OCoLC)1162737184
|
| 037 |
|
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|a com.springer.onix.9789811329531
|b Springer Nature
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| 040 |
|
|
|a N$T
|b eng
|e rda
|e pn
|c N$T
|d N$T
|d YDX
|d EBLCP
|d GW5XE
|d OCLCF
|d VT2
|d UPM
|d MERER
|d UKMGB
|d LQU
|d OCLCQ
|d LEATE
|d UKAHL
|d OCLCQ
|d NLW
|d OCLCO
|d OCLCQ
|d OCLCO
|d OCLCQ
|d OCLCO
|d OCLCL
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|a COM6
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4 |
|a TA418.9.N35
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| 072 |
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7 |
|a TEC
|x 009000
|2 bisacsh
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7 |
|a TEC
|x 035000
|2 bisacsh
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|
7 |
|a TGM
|2 bicssc
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7 |
|a TGM
|2 thema
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|
7 |
|a PNRX
|2 thema
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|a 620.5
|2 23
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|a Shimoda, Tatsuya,
|e author.
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|a Nanoliquid processes for electronic devices :
|b developments of inorganic functional liquid materials and their processing /
|c Tatsuya Shimoda.
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|a Singapore :
|b Springer,
|c 2019.
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|a 1 online resource.
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|a Online resource; title from PDF title page (EBSCO, viewed February 6, 2019)
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|a Intro; Preface; Contents; Part I: Introduction to Liquid Process; Chapter 1: Liquid Process; 1.1 Liquid and Its Formability; 1.2 Categories of Liquid Process; 1.2.1 First Step: Conversion Way from Liquid to Solid; 1.2.2 Second Step: Direct Forming Process; Part II: Silicon-Based Materials; Chapter 2: Guide to Silicon-Based Materials; Chapter 3: Liquid Silicon; 3.1 CPS; 3.1.1 Hydrosilanes and CPS; 3.1.2 Structures of a CPS Molecule; 3.1.3 Electronic Structure of Isolated CPS Molecule; 3.1.4 Interaction Between CPS Molecules; 3.2 Silicon Ink; 3.2.1 Silicon Ink from CPS.
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|a 3.2.2 Polymer Structure in Silicon Ink3.2.3 Doped Silicon Inks; 3.2.3.1 N-Type Silicon Ink; 3.2.3.2 P-Type Silicon Ink; References; Chapter 4: Thin Film Formation by Coating; 4.1 Coating Process and Molecular Forces; 4.2 The Origin of Molecular Forces; 4.2.1 Theory of van der Waals Free Energy; 4.2.2 Measurement of Refractive Index n; 4.2.3 Molecular Forces of CPS and Silicon Compounds; 4.3 Coating of Si Ink; 4.3.1 General Remarks on Si Ink Coating; 4.3.2 Observations of Liquid Films; 4.3.3 Hamaker Constant and Coating Property; 4.4 Conversion from Polysilane to Amorphous Si by Pyrolysis.
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|a 4.4.1 Film Appearance During Pyrolysis and TG/DTA Analysis of Si Ink4.4.2 Raman Scattering Analysis; 4.4.3 FT-IR and SIMS Analyses; 4.4.4 Properties of Amorphous Films; References; Chapter 5: Liquid Vapor Deposition Using Liquid Silicon (LVD); 5.1 Formation of I-, N-, and P-Type Silicon Film by LVD; 5.1.1 LVD Method and Experiment; 5.1.2 CPS Deposition Process; 5.1.3 Film Properties; 5.1.3.1 Electrical Properties; 5.1.3.2 Film Structure with FTIR and XPS Measurements; 5.1.4 Conclusion; 5.2 High-Quality Amorphous Silicon Film with LVD; 5.2.1 New Equipment for LVD.
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|a 5.2.2 Film Quality with Processing Temperature5.2.3 Film Quality with CPS Supply Speed; 5.2.4 Electronic Properties of a-Si:H Films; 5.2.5 Oxygen Contamination in a-Si:H Film; 5.2.6 Summary; References; Chapter 6: Liquid Silicon Family Materials(1): SiO2, CoSi2, and Al; 6.1 SiO2 Fabrication from Liquid Silicon; 6.1.1 Forming SiO2 Films from Liquid Silicon Material; 6.1.2 The Sole Solution-Processed SiO2 Film for TFTs; 6.1.3 Multiuse of Solution-Processed SiO2 Films for TFTs; 6.1.4 Conclusions; 6.2 CoSi2 Fabrication from Liquid Silicon; 6.2.1 Metal Silicide from Solution.
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|a 6.2.2 Synthesis of Cobalt Silicide Ink6.2.3 Formation of CoSi2 Films; 6.2.4 TEM Observation; 6.2.5 Comparison of this Process with the Conventional Ones; 6.2.6 More Detailed Analyses; 6.2.7 Conclusion; 6.3 Al Fabrication Via Solution Process; 6.3.1 Triethylamine Alane as a Precursor of Metal Al; 6.3.2 Deposition Process and Reaction; 6.3.3 Analysis of Film Structure and Al Growth Manner; 6.3.4 Selective Deposition of Al; 6.3.5 Conclusion; References; Chapter 7: Liquid Silicon Family Materials(2): SiC; 7.1 SiC Fabrication via Liquid Process.
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|a This book summarizes the results of the research on how to make small electronic devices with high properties by using simple liquid processes such as coating, self-assembling and printing, especially focusing on devices composed of silicon and oxide materials. It describes syntheses and analyses of solution materials, formations of solid thin films from solutions, newly developed patterning methods to make devices, and characterization of the developed devices. In the first part of the book, the research on liquid silicon (Si) materials is described. Because the use of a liquid material is a quite new idea for Si devices, this book is the first one to describe liquid Si materials for electronic devices. Si devices as typified by MOS-FET have been produced by using solid and gas materials. This volume precisely describes a series of processes from material synthesis to device fabrication for those who are interested and are/will be engaged in liquid Si-related work. In the latter part of the book, a general method of how to make good oxide films from solutions and a new imprinting method to make nanosized patterns are introduced. For making oxide films with high quality, the designing of the solution is crucial. If a solution is designed properly, a gel material called "cluster gel" can be formed which is able to be imprinted to form nanosized patterns. The anticipated readers of this book are researchers, engineers, and students who are interested in solution and printing processes for making devices. More generally, this book will also provide guidelines for corporate managers and executives who are responsible for making strategies for future manufacturing processes.
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|x Engineering (General)
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|a Electronics engineering.
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|a TECHNOLOGY & ENGINEERING
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|a Nanostructured materials.
|2 fast.
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|a SpringerLink (Online service)
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0 |
8 |
|i Print version:
|a Shimoda, Tatsuya.
|t Nanoliquid processes for electronic devices.
|d Singapore : Springer, 2019
|z 9811329524
|z 9789811329524
|w (OCoLC)1052872255.
|
| 907 |
|
|
|a .b59410024
|b multi
|c -
|d 190402
|e 240321
|
| 998 |
|
|
|a (3)cue
|a cu
|b 240227
|c m
|d z
|e -
|f eng
|g si
|h 0
|i 2
|
| 948 |
|
|
|a MARCIVE Overnight, in 2024.03
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| 948 |
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|a MARCIVE Overnight, in 2023.02
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|a MARCIVE Over, 07/2021
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|a MARCIVE Comp, 2019.12
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|a MARCIVE Overnight 07/2019
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|a MARCIVE Overnight 05/2019
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| 994 |
|
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|a 92
|b COM
|
| 995 |
|
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|a Loaded with m2btab.ltiac in 2024.03
|
| 995 |
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|a Loaded with m2btab.elec in 2024.02
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|a Loaded with m2btab.ltiac in 2023.02
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|a Loaded with m2btab.ltiac in 2021.07
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| 995 |
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|a Loaded with m2btab.elec in 2021.06
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| 995 |
|
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|a Loaded with m2btab.ltiac in 2019.12
|
| 995 |
|
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|a Loaded with m2btab.ltiac in 2019.08
|
| 995 |
|
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|a Loaded with m2btab.ltiac in 2019.05
|
| 995 |
0 |
0 |
|a OCLC offline update by CMU and loaded with m2btab.elec in 2019.04
|
| 999 |
|
|
|e z
|
| 999 |
|
|
|a cue
|
| 989 |
|
|
|d cueme
|e - -
|f - -
|g -
|h 0
|i 0
|j 200
|k 240227
|l $0.00
|m
|n - -
|o -
|p 0
|q 0
|t 0
|x 0
|w SpringerLink
|1 .i15061276x
|u http://ezproxy.coloradomesa.edu/login?url=https://link.springer.com/10.1007/978-981-13-2953-1
|3 SpringerLink
|z Click here for access
|