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Chemical vapor deposition growth and characterization of two-dimensional hexagonal boron nitride
This thesis focuses on the growth of a new type of two-dimensional (2D) material known as hexagonal boron nitride (h-BN) using chemical vapor deposition (CVD). It also presents several significant breakthroughs in the authors' understanding of the growth mechanism and development of new growth...
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| Main Author: | |
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| Corporate Author: | |
| Format: | eBook |
| Language: | English |
| Published: |
Singapore :
Springer,
2018.
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| Series: | Springer theses.
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| Physical Description: |
1 online resource. |
| Subjects: | |
| Online Access: | SpringerLink - Click here for access |
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| 100 | 1 | |a Tay, Roland Yingjie, |e author. | |
| 245 | 1 | 0 | |a Chemical vapor deposition growth and characterization of two-dimensional hexagonal boron nitride / |c Roland Yingjie Tay. |
| 264 | 1 | |a Singapore : |b Springer, |c 2018. | |
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| 500 | |a Doctoral thesis accepted by the Nanyang Technological University, Singapore. | ||
| 504 | |a Includes bibliographical references. | ||
| 520 | |a This thesis focuses on the growth of a new type of two-dimensional (2D) material known as hexagonal boron nitride (h-BN) using chemical vapor deposition (CVD). It also presents several significant breakthroughs in the authors' understanding of the growth mechanism and development of new growth techniques, which are now well known in the field. Of particular importance is the pioneering work showing experimental proof that 2D crystals of h-BN can indeed be hexagonal in shape. This came as a major surprise to many working in the 2D field, as it had been generally assumed that hexagonal-shaped h-BN was impossible due to energy dynamics. Beyond growth, the thesis also reports on synthesis techniques that are geared toward commercial applications. Large-area aligned growth and up to an eightfold reduction in the cost of h-BN production are demonstrated. At present, all other 2D materials generally use h-BN as their dielectric layer and for encapsulation. As such, this thesis lays the cornerstone for using CVD 2D h-BN for this purpose. | ||
| 588 | 0 | |a Online resource; title from PDF title page (EBSCO, viewed June 25, 2018). | |
| 505 | 0 | |a Intro; Supervisor's Foreword; Abstract; Parts of this thesis have been published in the following journal articles:; List of Publications; Acknowledgements; Contents; Abbreviations; List of Figures; List of Tables; 1 Synthesis of Two-Dimensional Hexagonal Boron Nitride; 1.1 Introduction; 1.2 Motivation; 1.3 Objectives and Scope; 1.4 Major Contributions of This Thesis; 1.5 Organization of This Thesis; References; 2 Literature Review; 2.1 Structure, Properties and Applications of h-BN; 2.2 Fabrication of Atomically Thin h-BN Nanosheets; 2.2.1 Mechanical Exfoliation. | |
| 505 | 8 | |a 2.2.2 Liquid Phase Exfoliation2.2.3 Chemical Vapor Deposition; 2.3 Characterization of CVD-Grown h-BN Films; 2.3.1 Scanning Electron Microscopy; 2.3.2 Atomic Force Microscopy; 2.3.3 Transmission Electron Microscopy; 2.3.4 Raman Spectroscopy; 2.3.5 X-ray Photoelectron Spectroscopy; 2.3.6 Ultraviolet-visible Spectroscopy; 2.3.7 Four-Point Probe; 2.4 Methods; 2.4.1 Transfer Process; 2.4.1.1 Wet Transfer; 2.4.1.2 Electrochemical Delamination; 2.4.2 Device Fabrication; 2.4.3 Characterization; References; 3 Controllable Growth of Hexagonal Boron Nitride Films on Cu Foils; 3.1 Introduction. | |
| 505 | 8 | |a 3.2 Experimental Section3.2.1 APCVD Growth of h-BN Films; 3.3 Results and Discussion; 3.3.1 Substrate Position; 3.3.2 Growth Temperature; 3.3.3 Growth Time; 3.3.4 Precursor Conditions; 3.3.5 Characterization of Large-Area h-BN Thin Films; 3.3.6 Triangular Shaped h-BN Domains; 3.4 Summary; References; 4 Growth of Nanocrystalline Boron Nitride Films on Dielectric Substrates; 4.1 Introduction; 4.2 Experimental Section; 4.2.1 CVD Growth of NCBN Films; 4.3 Results and Discussion; 4.4 Summary; References; 5 Growth of Large Single Crystalline Monolayer Boron Nitride Hexagons; 5.1 Introduction. | |
| 505 | 8 | |a 5.2 Experimental Section5.2.1 Electropolishing of Cu Foils; 5.2.2 APCVD Growth of h-BN Single Crystals; 5.3 Results; 5.3.1 Growth of Hexagonal Shaped h-BN Domains; 5.4 Discussion; 5.5 Summary; References; 6 Growth of Oriented Single Crystalline Hexagonal Boron Nitride Monolayers; 6.1 Introduction; 6.2 Experimental Section; 6.2.1 APCVD Growth of h-BN on Re-solidified Cu; 6.3 Results; 6.3.1 Growth of Oriented h-BN Domains; 6.3.2 Structural Characterization; 6.3.3 Characterization of Aligned h-BN Films; 6.4 Discussion; 6.5 Summary; References. | |
| 505 | 8 | |a 7 A New Single-Source Precursor for Monolayer h-BN and h-BCN Thin Films7.1 Introduction; 7.2 Experimental Section; 7.2.1 APCVD Growth of h-BN and h-BCN Films; 7.3 Results and Discussion; 7.3.1 Growth of Monolayer h-BN Single Crystals; 7.3.2 Growth of Few-Layer h-BCN Films; 7.4 Summary; References; 8 Conclusions and Recommendations for Future Work; 8.1 Conclusions; 8.2 Recommendations for Future Work; 8.2.1 Terminating Edges of Hexagonal Shaped h-BN Domains; 8.2.2 Defect Lines; 8.2.3 Adlayer Islands; References. | |
| 650 | 0 | |a Boron nitride. |0 https://id.loc.gov/authorities/subjects/sh86001350. | |
| 650 | 0 | |a Chemical vapor deposition. |0 https://id.loc.gov/authorities/subjects/sh94001275. | |
| 650 | 0 | |a Nanostructured materials. |0 https://id.loc.gov/authorities/subjects/sh93000864. | |
| 650 | 0 | |a Electronics |x Materials. |0 https://id.loc.gov/authorities/subjects/sh85042388. | |
| 650 | 2 | |a Nanostructures. |0 https://id.nlm.nih.gov/mesh/D049329. | |
| 650 | 6 | |a Nitrure de bore. | |
| 650 | 6 | |a Dépôt chimique en phase vapeur. | |
| 650 | 6 | |a Nanomatériaux. | |
| 650 | 6 | |a Électronique |x Matériaux. | |
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| 650 | 7 | |a Chemical vapor deposition. |2 fast. | |
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| 650 | 7 | |a Nanostructured materials. |2 fast. | |
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